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VLSI fabrication principles: Silicon and gallium arsenide

By:

Gandhi, Sorab K

Material type: Text

Text

TextPublication details: John Wiley & Sons, New Delhi: ©2003Edition: 2ndDescription: xxiv, 834pISBN:

9788126517909

Subject(s):

Electronics and Communication Engineering

DDC classification:

621.395 GAN

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Holdings
Item type	Current library	Collection	Call number	Status	Date due	Barcode
Books	GCET LIBRARY B.Tech (ECE)	Electronics and Communication Engineering	621.395 GAN (Browse shelf(Opens below))	Available		017903
Books	GCET LIBRARY B.Tech (ECE)	Electronics and Communication Engineering	621.395 GAN (Browse shelf(Opens below))	Available		017904
Reference Books	GCET LIBRARY B.Tech (ECE)	Electronics and Communication Engineering	621.395 GAN (Browse shelf(Opens below))	Not for loan		017905
Books	GCET LIBRARY B.Tech (ECE)	Electronics and Communication Engineering	621.395 GAN (Browse shelf(Opens below))	Available		017906
Books	GCET LIBRARY B.Tech (ECE)	Electronics and Communication Engineering	621.395 GAN (Browse shelf(Opens below))	Available		017907

Browsing GCET LIBRARY shelves, Shelving location: B.Tech (ECE), Collection: Electronics and Communication Engineering Close shelf browser (Hides shelf browser)

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Previous	621.395 ESH Essential of VLSI technology	621.395 GAN VLSI fabrication principles: Silicon and gallium arsenide	621.395 GAN VLSI fabrication principles: Silicon and gallium arsenide	621.395 GAN VLSI fabrication principles: Silicon and gallium arsenide	621.395 GAN VLSI fabrication principles: Silicon and gallium arsenide	621.395 GAN VLSI fabrication principles: Silicon and gallium arsenide	621.395 GAN VLSI fabrication principles	Next

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